Equipment

The Institute for Integrated Systems and Device Technology has a total of 4,780 m2 of floor space at its disposal; 2,620 m2 for offices and special purposes and 1,590 m2 of laboratory space. In addition to approx. 500 m2 of own cleanroom area, approx. 1000 m2 of cleanroom area are shared with the Chair of Electron Devices (University of Erlangen-Nuremberg).

Great importance is attached to the compatibility of the semiconductor laboratory equipment with industry standards. The equipment pool enables complete processing and metrological evaluation of silicon wafers with a diameter of up to 150 mm, mostly for 200 mm, and partially for 300 mm. Also the cassette-to-cassette wafer handling meets the high standards required by the semiconductor industry.

The IISB has the following equipment at its disposal:

Processing Equipment

Metrology and Analytics

Software and Computers



Processing Equipment
  • Doping: 5 ion implanters, including a high-energy implanter (up to 6 MeV), rapid thermal processing (RTP)
  • Oxidation, diffusion and annealing: 4-stage furnaces, 300 mm vertical furnace, rapid thermal oxidation
  • Layer deposition: LPCVD of SiO2, Si3N4, polysilicon, TEOS, BPSG, PECVD of SiO2 and low stress Si3N4, ALD and MOCVD of high-k dielectrics and metals, electron beam evaporation, resistance evaporation, inductive evaporator, sputtering system, annealing and epitaxy systems for SiC
  • Etching methods: plasma and RIE dry etcher for SiO2, Si3N4, silicon, polysilicon and aluminum, resist ashing, wet benches for all essential etching steps
  • Cleaning: Cholin and Piranha, final cleaning equipment
  • Lithography: projection and proximity exposure systems, E-beam system, automatic wafer track for coating and developing
  • Nanoimprint Lithography: Nano Patterning Stepper (NPS) 300 structuring of substrates with diameters up to 200 mm
  • Polishing: double side polishing, chemical mechanical polishing
  • Class 100 cleanrooms for the development, testing, prequalification, and mounting of semiconductor manufacturing equipment with
    • MESC-compatible cluster platform with XPS measurement module
    • Test set-up for particle measurements
    • Test set-up for plasma diagnostics
    • Vertical furnace with in situ layer thickness metrology
  • 2 bonders (manual and automatic), packaging
  • Al wedge bonding
  • Vacuum vapor phase soldering
  • Facilities for crystal growth: 5 high pressure furnaces, 1 multi-zone furnace for high vacuum and reactive atmosphere, several multi-zone furnaces, among other things for special applications
  • Wire saw and polishing machines
Metrology and Analytics

Chemical characterization:
  • Vapor phase decomposition (VPD) with or without automatic droplet scanner
  • Pack extraction method (PEM)
  • Wafer surface preparation system (WSPS)
  • TOC / DOC measurement tools
Optical characterization:
  • Atomic absorption spectroscopy (AAS)
  • Optical emission spectroscopy with inductively coupled plasma (ICP-OES)
  • Defect inspection on un-patterned wafer surfaces
  • Thermal imaging system
  • Fourier transformation infrared spectroscopy (FTIR)
  • Laser scanning microscopy (LSM)
  • Microscopy with digital image conversion
  • Optical system for wafer inspection and classification
  • Particle contamination (patterned and un-patterned)
  • Particle counter
  • Particle counter for liquid and gaseous media and for monitoring cleanroom quality
  • Photometer
  • Layer thickness (optically with ellipsometry or interferometry, mechanically with profilometry, rapid interferometry for in situ measurements, spectral ellipsometry (in situ, ex situ))
  • Total-reflection X-ray fluorescence analytics (TXRF)
  • UV / VIS / NIR spectrometry
Physical characterization:
  • Liquid chromatography (LC)
  • Gas chromatography mass spectrometer with thermo-desorption (TD) GC MS
  • Calometry, thermodynamics (DTA and DSC)
  • Contact angle measurement tool
  • Magnetic sector field mass spectroscopy
  • Mechanical stress in thin films
  • 2 focused ion beam systems (FIB)
  • Secondary neutral mass spectroscopy (SNMS)
  • X-ray photoelectron spectroscopy (XPS)
  • Scanning electron microscope (SEM) with energy-dispersive X-ray analysis (EDX)
  • X-ray diffraction (XRD) and X-ray reflectometry (XRR)
  • Scanning probe microscopy for electrical measurements: tunnel and leakage current (TUNA, c-AFM), spreading resistance (SSRM), capacitance (SCM)
  • Atomic force microscopy (AFM) for topography and roughness measurements
  • Wafer thickness and shape (capacitive)
  • Layer thickness (mechanically with profilometer)
  • Feature size (scanning electron microscope, AFM)
  • Thermo-desorption
  • Thermal wave metrology
  • Transmission electron microscopy (TEM)
Electrical characterization:
  • Diffusion length and lifetime of minority carriers (Electrolytical Metal Tracer (Elymat), Microwave Detected Photoconductivity Decay (μ-PCD), Surface Photovoltage (SPV))
  • Resistivity mappings (four point probe and spreading resistance)
  • DLTS (Deep Level Transient Spectroscopy) for measurement of electrically active deep levels
  • Oxide-charge and interface-state density (high and low-frequency capacitance voltage measurement, thermal stress)
  • I-V and C-V measurements with manual or automatic wafer probing
  • Impedance analyzer, parameter analyzer
  • Profile of carrier concentration and mobility (Hall measuring set, spreading resistance)
  • Solar cell measurement setup
  • Three-phase power meter with line harmonic analyzer
  • Burst and surge pulse sources, load-dump, ESD
  • DC power sources and electronic loads up to 60 kW
  • Partial discharge measuring
  • Zth measurement equipment
Further metrology:
  • Climatic test cabinet
  • Drive test bench (up to 40 kW)
  • Power cycling test equipment
  • Oscilloscopes up to 10 GS/s (Gigasamples per second)
Software Tools Computers
  • Powerful computer network (incl. clusters) for performing simulations, PCs, and control computers




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